1 t a = 25 c . u nless otherwise noted. 5 - elm549407a - n g e neral description f eatures maximum a bsolute ratings thermal characteristics pin configuration c ircuit parameter symbol typ. max. unit maximum junction - to - a mbient r ja 62.5 c /w parameter symbol limit unit drain - s ource voltage vds -60 v gate - s ource v oltag e vgs 20 v conti nuous drain current t a = 25 c id -4.6 a t a = 70 c -3.8 pulsed d rain current idm -20 a power dissipation t c = 25 c pd 2.8 w t c = 70 c 1.8 j unction and storage temperature range tj , tstg - 55 to 150 c so p - 8 (top vi ew) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain 4 3 2 1 5 6 7 8 elm549407a - n uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. ? vds =- 6 0v ? id = -4.6 a ? rds (on) < 10 0 m (vgs =- 10 v) ? rds (on) < 120 m (vgs =- 4 .5v) single p-channel mosfet g d d d s s s d
2 5 - elm549407a - n electrical characteristics parameter symbol condition min. typ. max. unit static parameters drain - s ource breakdown voltage bvdss id =- 25 0 a , vgs = 0v - 6 0 v zero g ate voltage drain current idss vds =- 48 v, vgs = 0v -1 a t a = 8 5 c -20 gate - b ody leakage current ig s s vds = 0v , vgs = 20 v 100 n a gate t hreshold voltage vg s( th) vds = vgs , id =- 25 0 a -0.8 -2.5 v on s tate drain current i d ( on ) vgs =- 10 v, vds =- 5v - 2 0 a static drain - s ource on - r esistance r d s (o n ) vgs =- 10 v, id =-4. 6 a 88 100 m vgs =- 4 .5v, id =- 3.8 a 98 120 forward transconductance gfs vds =-1 5v, id = - 3.2 a 12 s diode forward voltage vsd i s =- 2 a, vgs = 0v -0.8 -1.2 v max. body - d iode continuous c urrent is - 2 a dynamic parameters input capacitance c iss vgs = 0v, vds =- 30 v, f = 1mh z 900 pf output capacitance c oss 90 pf reverse transfer capacitance c r ss 40 pf switching parameters total gate charge q g vgs =- 10 v, vds =- 30 v, id = - 4 a 12.0 20.0 nc gate - s ource charge q gs 2.5 nc gate - d rain charge q gd 3.5 nc turn - o n delay time t d (on) vgs =- 10 v, vds =- 30 v r l = 7 .5 , id=-3.8a rgen = 3 10 20 ns turn - o n rise t ime t r 6 10 ns turn - o ff delay time t d ( of f ) 30 45 ns turn - o ff fall t ime t f 12 25 ns single p-channel mosfet t a = 25 c . u nless otherwise noted.
3 5 - elm549407a - n typical electrical and thermal characteristics single p-channel mosfet a f p 9 4 0 7 6 0 v p - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a m a r . 2 0 1 1 p a g e 3 t y p i c a l c h a r a c t e r i s t i c s
4 5 - elm549407a - n single p-channel mosfet a f p 9 4 0 7 6 0 v p - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a m a r . 2 0 1 1 p a g e 4 t y p i c a l c h a r a c t e r i s t i c s
5 5 - elm549407a - n a f p 9 4 0 7 6 0 v p - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a m a r . 2 0 1 1 p a g e 5 t y p i c a l c h a r a c t e r i s t i c s t est circuit and w aveform single p-channel mosfet
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